Description
Memory Type
DDR5
Memory
8GB
Memory Speed
4800
Memory Voltage
1.1 V
Series
Value
Package
Bulk
Information
| DDR5 ushers in data-centric innovation DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. Samsung’s memory technology propels the next era of planet-friendly innovation with power-saving DDR5. |
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Breathtaking speed for huge real-time data With exceptional transfer speeds of up to 7,200 Mbps, DDR5 effectively handles the ever-increasing demands of larger, more complex data workloads. DDR5 brings more than doubled increase in performance compared to DDR4, with double the burst length from 8 to 16, and double the banks from 16 to 32. The astonishing performance raises the ceiling on big data processing, while seamlessly handling 8K content. |
| Twice the capacity to fuel industry innovation Samsung’s 10nm-class process and EUV technology enable chip units to leap from 16Gb to 32Gb. Doubling chip capacity means one module can provide up to 512GB, to fluidly handle huge simultaneous workloads, with scalability for future innovation. |
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Robust reliability with a self-correcting solution ODECC (on-die error-correction code) technology applied in DDR5 helps maintain secure and stable data reliability, to fully leverage powerful performance. ODECC virtually eliminates single bit errors for enhanced reliability even with the strenuous demands of big data. |
| The energy-saving choice to sustain our planet DDR5 achieves 30% greater power efficiency than DDR4 through improved performance and power reduction. Replacing a data center’s DDR4 with DDR5 saves power of up to 1TWh annually. The on-DIMM PMIC further boosts power management efficiency and power supply stability. It is the all-around sustainable choice for our environment. |
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